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Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN

journal contribution
posted on 2024-06-30, 23:49 authored by Jackson MillerJackson Miller, Harry TrodahlHarry Trodahl, M Al Khalfioui, S Vézian, Benjamin RuckBenjamin Ruck
A unique bulk-origin perpendicular magnetic anisotropy (PMA) is reported in thin films of the cubic ferromagnetic semiconductor GdxSm1-xN. PMA behavior is clearly signaled by in-vs-out-of-plane magnetic hysteresis showing out-of-plane remanence of ∼ 80% of the saturation magnetization in films with up to 30% Gd. Anomalous Hall effect data show further that the conduction-band spin imbalance shows complete 100% remanence to retain half-metallic conduction even as the out-of-plane applied field is reduced to zero, in stark contrast to the 80% magnetization remanence. The unusual occurrence of PMA in this cubic material is discussed as stabilized by a mix of two in-plane crystal orientations in the epitaxial (111)-oriented films.

Funding

Magnetic Memory for Superconducting and Computing (NSC7a) | Funder: Ministry of Business, Innovation and Employment

History

Preferred citation

Miller, J. D., Trodahl, H. J., Al Khalfioui, M., Vézian, S. & Ruck, B. J. (2023). Unlocking perpendicular magnetic anisotropy with Gd substitution in SmN. Applied Physics Letters, 122(9), 092402-. https://doi.org/10.1063/5.0131472

Journal title

Applied Physics Letters

Volume

122

Issue

9

Publication date

2023-02-27

Pagination

092402

Publisher

AIP Publishing

Publication status

Published

Online publication date

2023-02-27

ISSN

0003-6951

eISSN

1077-3118

Article number

ARTN 092402

Language

en

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