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Defect-activated versus intrinsic Raman spectra of GdN and LuN

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posted on 2024-03-27, 02:10 authored by K Van Koughnet, Harry TrodahlHarry Trodahl, William Holmes-HewettWilliam Holmes-Hewett, Benjamin RuckBenjamin Ruck
We report Raman studies of GdN and LuN, two of the rare-earth mononitrides that form a series of mostly intrinsic ferromagnetic semiconductors. Their rock-salt structure supports no first-order Raman scattering, but, nonetheless, we find a density-of-modes pattern expected for nearly point-defect scattering, an intrinsic two-phonon scattering spectrum, and an LO feature that appears independent of defect concentration. The results are compared with the phonon dispersion calculated within a density functional theory treatment indicating that computed phonon frequencies are smaller than measured, with the disagreement rising to ∼30% for the TA branch. Contrary to the previous assumption of defect-induced scattering at the L point, we propose that the observed LO feature arises from LO(Γ) scattering induced by the Fröhlich interaction, similar to what has been observed in YbS.

History

Preferred citation

Van Koughnet, K., Trodahl, H. J., Holmes-Hewett, W. F. & Ruck, B. J. (2023). Defect-activated versus intrinsic Raman spectra of GdN and LuN. Physical Review B, 108(6), 064306-. https://doi.org/10.1103/PhysRevB.108.064306

Journal title

Physical Review B

Volume

108

Issue

6

Publication date

2023-08-01

Pagination

064306

Publisher

American Physical Society (APS)

Publication status

Published

Online publication date

2023-08-09

ISSN

2469-9950

eISSN

2469-9969

Article number

064306

Language

en

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